Investigation of reactive - ion - etch - induced damage of InP / InGaAs multiple quantum wells by photoluminescence
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Investigation of reactive-ion-etch-induced dama e of InPhGaAs multiple quantum wells by photoluminescence
The effects of CH&I, reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0.5, 1,2,3,5, 10,20, and 70 monolayers, respectively, on top of a 200~nm-thick layer of InGaAs for ca...
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Band gap blue shift of InGaAs/InP multiple quantum well (MQW) structures by impurity-free vacancy disordering (IFVD) is studied by photoluminescence (PL) and secondary ion mass spectrum (SIMS). SiO2, Si3N4, and spin on glass (SOG) were used for the dielectric layers to create the vacancies. The results indicate that the band gap blue shift varies with the different dielectric layers and depends...
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We have compared the time integrated photoluminescence ~PL! and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are ...
متن کاملLuminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering
InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the outdi...
متن کاملIntermixing of InP-based multiple quantum wells for integrated optoelectronic devices
The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusi...
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تاریخ انتشار 2017